DIODE GEN PURP 200V 3A B-MELF JAN1N5417US
The pictures are for reference only
Description:
DIODE GEN PURP 200V 3A B-MELF
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Rapid recovery=< 500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
Military, MIL-PRF-19500/411
DataSheet
JAN1N5417US(Diode rectifier)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15051,Price reference "real-time change" China/Hongkong。 JAN1N5417US package/specs, Download JAN1N5417US、Datasheet。